Project title
Optically and acoustically controlled devices for controlling terahertz radiation based on `crystalline and nanocomposite materials.
Project content
The problem the research aimed to solve:
Improving the characteristics of existing THz radiation modulators.
There are two types of optically controlled THz radiation
modulators. The first uses a light beam to illuminate the active surface of the
device in order to excite free carriers, which leads to a change in the
dielectric properties of the device material. The second type of modulators
uses controlled light with a two-dimensional grating that illuminates, for
example, a silicon wafer [S.Busch et.al. // Optic. Express 2012 37 1391]. This
allows for higher resolution and bandwidth and greater modulation depth. This
approach may be of interest in the development of millimeter-wave lens antennas
[Modern Lens Antennas for Communications Engineering / John Thornton, Kao-Cheng
Huang. - Wiley-IEEE Press, 2013. - p.428]. It should be noted that there is a
need to develop optically controlled THz radiation modulators of the second
type with lower switching times. The principle of such improved modulation on
charge density waves was proposed even earlier and is now actively used [Peter
J. et.al. // Optics Express 2019 27 1433]. But the disadvantage of this
approach is the need to use low temperatures. Therefore, the implementation of
such modulators operating under normal conditions is an urgent task.
The object of the project research
Is crystalline materials Si, Ge, BSO, BGO, Se and ITO films, Si:BSO and Si:BGO nanocomposites in the
visible, infrared and THz frequency range.
The subject of the project research
Is the optical and quasi-optical properties of selected materials, the influence of optical irradiation
and acoustic waves on their electrical properties.
The purpose and main goal of the research:
The main goal of the project is the development and research of optically controlled modulators based on
Si, Ge or Se and acoustically
controlled modulators based on Bi12GeO20 or Bi12SiO20 in the THz spectral range.
To achieve the goal, it was necessary to perform the following tasks:
- Sample preparation, their orientation, cutting, grinding and polishing, electrode
deposition.
- Measurement of conductivity and transmission spectra in the optical range of selected
materials, as well as nanoporous matrices.
- Measurement of Raman spectra of nanoporous matrices.
- Creation of a stand for measuring photogeneration of carriers in the materials under
study.
- Measurement of the effect of light radiation on the generation of carriers in Si, Ge, Se,
Bi12GeO20 and Bi12SiO20 materials.
- Sputtering of ITO films on a crystalline Si substrate. Task 2: Study of transmission
spectra of ITO films in the THz region.
- Study of reflection spectra of ITO films in the THz region.
- Study of the transmission spectra of Si, Ge, Se, Bi12GeO20 and Bi12SiO20 materials in
the THz region.
- Production of nanopowders of Bi12GeO20 and Bi12SiO20 crystals.
- Study of the influence of light radiation of different power on the transmission of
terahertz radiation by Si, Ge, Se, Bi12GeO20 and Bi12SiO20 materials.
- Testing of the technology for manufacturing nanocomposites with Bi12GeO20 and Bi12SiO20
nanocrystallites.
- Study of the transmission of selected materials in the millimeter spectral region.
- Measurement of Raman spectra of a nanocomposite with Bi12GeO20 and Bi12SiO20
nanocrystallites.Моделювання динаміки ґратки цих кристалів в об'ємному та
нанокристалітному станах.
- Development of a prototype of an optically controlled THz radiation modulator based on Si,
Ge or Se materials.
- Conducting a study of the operation of an optically controlled modulator in the THz range.
- Conducting a study of the operation of an optically controlled modulator in the millimeter
range.
- Development of a THz modulator using surface acoustic waves based on a Bi12GeO20 or
Bi12SiO20 crystal.
- Conducting a study of the parameters of the developed THz radiation modulator using
surface acoustic waves
Main results
Nanocomposite materials were created based on porous matrices of
Si, SiO2, Al2O3 and nanocrystals of Bi12GeO20, Bi12SiO20 filling. Nanoporous
structures from saturated aqueous solutions were filled with crystals of the
corresponding compounds and nanocrystalline structures were obtained from
high-temperature LiNbO3 crystals at a temperature of 925°C on Si and SiO2
matrices. Bi12GeO20 and Bi12SiO20 compounds were introduced into the pores of
mesoporous Si matrices by the melt method at high temperatures. Methods of
structural and spectroscopic analysis of nanosized compounds newly synthesized
in the pores of the parent matrices of Si and SiO2 were further developed.
The optimal thicknesses of crystalline samples were determined
according to the optical constants calculated from measurements to achieve the
maximum modulation depth of THz radiation at a frequency of 130 GHz. Using
chemical etching methods of the surface of semiconductor samples, it was
possible to achieve a modulation depth of THz radiation approaching 100%. The
efficiency of use was tested and the method of controlling THz radiation by
illuminating the sample with powerful optical radiation with different
apertures of optical illumination was improved. Different ranges were used:
80-140 GHz and 100-1350 GHz.
A method for optimizing the transmission of photomodulators of
the subterahertz frequency range based on semiconductor materials Si and Ge was
proposed. Experimental studies were conducted to confirm the optimization of
photomodulation in the transmission geometry. The refractive index n and the
absorption coefficient α for these materials were calculated based on the
measurement of the phase shift of electromagnetic radiation when it passes
through air, as well as when the sample under study is introduced into the
circuit. The results of the calculations of n and α using this method are
compared with the above method, which is based on the inverse and forward
Fourier transform and the application of the Henning window. The theoretical
method for analyzing the lattice dynamics of newly synthesized substances using
the results of a first-principles calculation has also been further developed.
Originality and innovative aspects
For the first time, nanostructures based on BGO and BSO crystals
were created on Si matrices at a temperature of 950°C.
For the first time, a study of photoinduced changes in Ge in the
reflection and transmission geometries depending on the thickness of the Ge
crystal and the intensity of illumination on photomodulation of radiation with
a frequency of 130 GHz was carried out.
For the first time, polarized Raman spectra of Bi12GeO20 and
Bi12SiO20 crystals were obtained, systematized according to irreducible
representations. For this, a special spectroscopic polarization technique was
used for these crystals.
For the first time, polarized Raman spectra were calculated from
first principles and the experimental spectra were interpreted based on ab
initio calculation of lattice dynamics.
For the first time, Raman spectra of the Si:Bi12GeO20
nanocomposite material were measured and analyzed.
Based on the project materials the oral and poster presentations were made at International
Conferences:
- Andrushchak
A.S., Danylov A.B., Balaban O.V., Venhryn B.Ya. Modulators for THz range:
principles and materials // 5th International Conference "Actual Problems
of Fundamental Science" (APFS-2023). Proceedings. June 01-05, 2023. Lutsk
- Svityaz', Ukraine. -P. 13-14.
- Shchur
Ya., Adamiv V., Teslyuk I, Andrushchak A. Preparation of Bi12GeO20
nanocrystalline structures // 3rd International Conference on Innovative
Materials and Nanoengineering (IMNE'2023). Conference Program and Book of
Abstracts. November 10-13, 2023. Dovgoluka, Ukraine. -P. 55.
- Andrushchak
N., Vynnyk D., Haiduchok V., Nikolenko A., Adamiv V., Strelchuk V., Syrotynsky
O., Andrushchak A. Optical Properties Investigation of Nanoporous Al2O3
Matrices with Embedded ADP and KB-5 Crystals // 3rd International Conference on
Innovative Materials and Nanoengineering (IMNE'2023). Conference Program and
Book of Abstracts. November 10-13, 2023. Dovgoluka, Ukraine. - P. 41.
- Shchur
Ya., Kityk A.V., Adamiv V., Teslyuk I., Vitusevich S., Andrushchak A. Raman
Spectroscopy and Symmetry Analysis in Structure Determining of Nanoconfined
Nanocrystals // 3rd International Conference on Innovative Materials and
Nanoengineering (IMNE'2023). Conference Program and Book of Abstracts. November
10-13, 2023. Dovgoluka, Ukraine. - P. 32.
- Bendak
A., Senko I., Vynnyk D., Rubish V. Selenium thin Films Applications in THz
Range // 3rd International Conference on Innovative Materials and
Nanoengineering (IMNE'2023). Conference Program and Book of Abstracts. November
10-13, 2023. Dovgoluka, Ukraine. - P. 72.
- Danylov
A., Venhryn B., Luniov S., Korolyshyn A., Senko I., Afanassyev D., Ratych A., Andrushchak
A. Effect of Photogeneration on Concentration of Excess Carriers in Si and Ge
Crystals // 3rd International Conference on Innovative Materials and
Nanoengineering (IMNE'2023). Conference Program and Book of Abstracts. November
10-13, 2023. Dovgoluka, Ukraine. - P. 62.
- Danylov A., Vynnyk
D., Haiduchok V. Optical
Properties of Thin Film and Bulk Materials in the Visible and Infrared Spectrum
Ranges // 3rd International Conference on Innovative
Materials and Nanoengineering (IMNE'2023). Conference Program and Book of Abstracts. November 10-13,
2023. Dovgoluka, Ukraine. - P. 39.
- Bukliv R.,
Adamiv V., Bordun I., Andrushchak N., Teslyuk I., Andrushchak A. Analysis of
some parameters of synthesized anodized aluminum oxide matrices // Conference
Proceedings. 2024 IEEE 17th International Conference on Advanced Trends in
Radioelectronics, Telecommunications and Computer Engineering (TCSET) Lviv,
Ukraine 08-12 October 2024. - P.359-363.
- Andrushchak N., Bukliv R., Venhryn B., Haiduchok V., Afanassyev D., Andrushchak
Andrushchak N., Bukliv R., Venhryn B., Haiduchok V., Afanassyev D., Andrushchak
A. Effect of chemical etching of mechanically treated monocrystalline germanium
wafers on their modulation abilities in the sub-THz range // 4th International
Conference on Innovative Materials and NanoEngineering (IMNE'2024). Conference
Program and Book of Abstracts. September 13-16, 2024. Dovgoluka, Ukraine. -
4-10.
- Balaban
O., Bukliv R., Danylov A., Sen'ko I., Venhryn B., Vynnyk D. Effect of Visible
Range Radiation on Photomodulation of Subterahertz Radiation by Single Crystal
Germanium // 4th International Conference on Innovative Materials and
NanoEngineering (IMNE'2024). Conference Program and Book of Abstracts.
September 13-16, 2024. Dovgoluka, Ukraine. - 2-6.
- Shchur
Ya., Kityk A.V., Adamiv V., Vitusevich S., Andrushchak A. Experimental and
Theoretical Investigations of Nanocomposite Materials Based on Si and SiO2
Porous Matrices // 4th International Conference on Innovative Materials and
NanoEngineering (IMNE'2024). Conference Program and Book of Abstracts.
September 13-16, 2024. Dovgoluka, Ukraine. - 2-2.
- Balaban
O., Vynnyk D., Sen`ko I., Venhryn B., Danylov A., Andrushchak A. Analysis of
Electrophysical Parameters of Semiconductors // 4th International Conference on
Innovative Materials and NanoEngineering (IMNE'2024). Conference Program and
Book of Abstracts. September 13-16, 2024. Dovgoluka, Ukraine. - 4-9.
- Venhryn B., Bukliv R., Danylov A., Haiduchok V., Senko I.,
Andrushchak A. The influence of etching processes of the surface of
mechanically processed single-crystal germanium on the photomodulation of
sub-terahertz radiation // VII International Scientific and Practical
Conference "Solid State Physics and Chemistry: State, Achievements and
Prospects", October 18-19, 2024, Lutsk. - p. 123. (in Ukrainian)
- Balaban
O.V., Vinnyk D.M., Venhryn B.Ya., Danylov A.B., Andrushchak A.S. Electrically
conductive properties of Si in the frequency range 10-2 - 106 Hz // XII
International scientific conference. Relaxed, Nonlinear and Acoustic Optical
Processes and Materials (RNAOPM'2024), Lutsk - Svityaz', 01 - 04.06.2024. -
p.37. (in Ukrainian)
- Bukliv R. L., Balaban O. V., Venhryn B. Ya., Vynnyk D. M., Danylov A. B., Gaiduchok*** V., Andrushchak A. S.
Surface preparation of germanium plates for use in subterahertz and terahertz radiation
ranges // Lviv Chemical Readings - 2025: Collection of scientific papers of the
XX Scientific Conference, Lviv, June 2-4, 2025. - 2025. - P. 118.16. (in Ukrainian)
- Balaban O., Bukliv R., Danylov A., Venhryn B., Vynnyk D.,
Andrushchak A. Electrophysical properties of Ge in the frequency range
10-1 - 105 Hz// Current problems of fundamental sciences: materials of the VI
international scientific conference dedicated to the memory of Giordano Bruno,
Lutsk, Svityaz, 09-12.06.2025. - 2025. - P. 16-17. (in Ukrainian)
- Bukliv R., Balaban O., Venhryn B., Vynnyk D., Danylov A.
Effect of chemical etching on photoinduced modulation of subterahertz radiation
by crystalline germanium // Chemical technology and engineering proceedings of
the 5th International scientific conference, June 23-26th, 2025, Lviv, Ukraine.
- 2025. - C. 204-208.
- D. Shulha, O. Buryy, V. Adamiv, A. Andrushchak. The photonic zone structures of
arrays of KDP nanorods // International workshop for young
scientists «Functional materials for technical and biomedical
applications» (Lviv, October 14-16, 2025). - 2025. - P. 8.
Papers
As part of the completed project, the following scientific and technical articles were published:
- Shchur Ya., Andrushchak N., Kityk A.V.,
Andrushchak A. Lattice dynamics of Bi12GeO20 crystal: Polarized Raman
scattering and first-principles analysis // Optical Materials. - 2024. -
V.157(1). - 116078. https://doi.org/10.1016/j.optmat.2024.116078.
- Bendak A., Buryy O., Haiduchok V.,
Andrushchak A., Sahraoui B., Kityk A..Photo-induced switching for sub-terahertz
applications // Optical Materials. -: 2026. - P. 117531.
Patents
The following documents were obtained as part of the completed project:
- Baluk V.I., Bendak A.V., Shulga D. O., Andrushchak A. S.
Method of X-ray structural studies of porous silicon membranes filled with
crystallites. Pat. 155881 (Ukraine), G01N23/20, Publ. 17.04.2024, Bull. No.
16/2024. https://sis.nipo.gov.ua/uk/search/detail/1795699/